| PART |
Description |
Maker |
| NJU7392 |
2ch Pushbutton Interface EVR with eala Stereo Expander
|
New Japan Radio
|
| LA7205M |
AGC Amp / Input Select / AGC Det / Comparator
|
ETC
|
| M51134FP M51134P |
BASS EMPHASIS CIRCUIT,SOP,20PIN,PLASTIC
BASS EMPHASIS CIRCUIT,DIP,20PIN,PLASTIC
From old datasheet system
|
Mitsubishi Electric & Electronics USA
|
| KBP306 KBP310 |
VOLTAGE RANGE 50 TO 1000 VOL TS
|
Gaomi Xinghe Electronic...
|
| NJU26101 |
Eala / SRS 3D / TruSurround / ViVA / ViVA /BBE / QFP32-R1
|
JRC
|
| LP502 LP502-PLID |
AUDIO AMPLIFIER, PDSO8 PLID, 8 PIN
LP502 - AGC-O Compression Preamplifier
Low Distortion AGC Compression Amplifier
|
GENNUM[Gennum Corporation]
|
| PS2805C-4-V-F3 PS2805C-4-V-F3-A PS2805C-1-V-F3-A P |
HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER
HIGH ISOLATION VOL TAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER
|
California Eastern Labs
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| M62499FP M62499E M62499 |
From old datasheet system
SOUND CONTROLLER WITH T-BASS and BBE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
