PART |
Description |
Maker |
GM71C4400C-60 GM71C4400C-70 GM71C4400C-80 GM71C440 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOSSTATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
M5M44405CTP-6S M5M44405CJ-5S |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
HM621100A |
1048576 word / 1 Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor Emulation Technology, Inc. Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Xiamen Hongfa Electroacoustic Co., Ltd. ITT, Corp.
|
PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器(RAM400动态) 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp. NEC Corp.
|
TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC List of Unclassifed Manufacturers
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