| PART |
Description |
Maker |
| 2DI30D-050 2DI30D-050A |
POWER TRANSISTOR MODULE 功率晶体管模
POWER TRANSISTOR MODULE 30 A, 600 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| 6DI100A-050 |
POWER TRANSISTOR MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五（巴西）总裁| 50A条一（c
|
IXYS, Corp.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| 2DI100D-050 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M |
100ns; 5V power supply; 8M x 32 flash module
120ns; 5V power supply; 8M x 32 flash module
150ns; 5V power supply; 8M x 32 flash module
8M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68
8Mx32 5V Flash Module(8Mx32 5V闪速存储器模块)
Flash MCP
|
Glenair, Inc.
White Electronic Designs Corporation
|
| MP4507 |
Power Transistor Module
|
Toshiba
|
| 6DI50M-050 |
POWER TRANSISTOR MODULE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
