| PART |
Description |
Maker |
| PEEL16V8J-15 PEEL16V8J-25 PEEL16V8P-15 PEEL16V8P-2 |
PEEL?V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL??V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL⑩6V8 -15/-25 CMOS Programmable Electrically Erasable Logic
|
List of Unclassifed Manufacturers
ETC
|
| BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM
5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM
1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM
8k隆驴8 bit electrically erasable PROM
|
Rohm
|
| ATF1500A ATF1500AL |
1500 gate electrically erasable CPLD, 5V, 44 pins
1500 gate electrically erasable low power CPLD, 5V, 44 pins
|
Atmel
|
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| GAL16V8D-7LR/883 GAL16V8D-7LD/883 GAL16V8D-15LR/88 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| ISPGAL22LV10-7LJ ISPGAL22LV10-7LJI ISPGAL22LV10-7L |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| BR24L32F-W BR24L32-W BR24L32FJ-W |
4k×8 bit electrically erasable PROM
|
Rohm
|
| ATF16V8B-7SC ATF16V8B-7PC ATF16V8B-7JC |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Amphenol, Corp.
|
