| PART |
Description |
Maker |
| W27L010 W27L010-12 W27L010-90 W27L010P-12 W27L010P |
128K 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
128K ′ 8 ELECTRICALLY ERASABLE EPROM
128K 8 ELECTRICALLY ERASABLE EPROM
128K ? 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| PEEL22CV10AP-25 PEEL22CV10AP-10 PEEL22CV10AP-15 PE |
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL⑩ 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
|
ANACHIP[Anachip Corp]
http://
|
| 27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM
256K ′ 16 ELECTRICALLY ERASABLE EPROM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM
5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
| GAL16V8D-7LR/883 GAL16V8D-7LD/883 GAL16V8D-15LR/88 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
|
| ISPGAL22LV10-7LJ ISPGAL22LV10-7LJI ISPGAL22LV10-7L |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
