| PART |
Description |
Maker |
| 1MBC10-060 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBH25-120 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBH50-060 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MB10D-120 |
Fuji Discrete Package IGBT 16 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| 1MB20D-060 |
Fuji Discrete Package IGBT 38 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRG4BC40WS IRG4BC40WL |
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| SGP23N60UFTU |
Discrete, High Performance IGBT; Package: TO-220; No of Pins: 3; Container: Rail 23 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 1MBH10D-060 |
Ratings and characteristics of Fuji IGBT 30 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
| IRGP450U |
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRGBC20S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
