| PART |
Description |
Maker |
| P11_416 2XP11_200 2XP11_260 P11 2XP11/260 P11/416 |
For capsule devices
|
SEMIKRON[Semikron International]
|
| P9_430 2XP9_210 P9 2XP9/210 |
Heatsink For capsule devices
|
SEMIKRON[Semikron International]
|
| SKT600/04D |
Capsule Thyristor
|
Semikron
|
| AEV25012 AEV25024 AEV25112 AEV25124 AEV25312 AEV25 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 30A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 30A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
|
Matsushita Electric Works(Nais)
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| S1R72U16 |
Allows USB devices to be controlled as IDE devices
|
Epson Company
|
| MICROSMD175F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
