| PART |
Description |
Maker |
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M5M5V5636GP-16 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| LPC1225 LPC1227 LPC1224 LPC1226 LPC1224FBD48 LPC12 |
32-bit ARM Cortex-M0 microcontroller; up to 128 kB flash and 8 kB SRAM
Cortex-M0 with up to 48 kB flash, 4 kB SRAM, RTC, comparator, 10-bit ADC, CRC, DMA and more Cortex-MO，最48kB 闪存kB静态随机存储器，时钟芯片，比较器，10位ADC,CRC检测，内存直接存取
96kB flash, 8kB SRAM, LQFP48 package
128kB flash, 8kB SRAM, LQFP48 package
|
NXP Semiconductors N.V.
|
| HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5U |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
4 M SRAM (512-kword ? 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM
From old datasheet system
|
UTRON Technology
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
|
HITACHI[Hitachi Semiconductor]
Renesas Electronics Corporation
|
| 89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位）立方米的SRAM
|
Maxwell Technologies, Inc
|
