| PART |
Description |
Maker |
| N04L1630C2B |
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04L63W2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit
|
ON Semiconductor
|
| N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| ISL55290 ISL55290EVAL1Z ISL55290IUZ ISL55290IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
Intersil Corporation
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| HA3-5142-5 HA7-5142-2 HA-5142 FN2909 |
Op Amp, Dual 400kHz, Ultra-Low Power, Unity Gain
Dual, 400kHz, Ultra-Low Power Operational Amplifier
Dual/ 400kHz/ Ultra-Low Power Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| 3150O-SERIES 3450O-SERIES 3551TPQ0 3551TPQ1 3551TP |
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Microprocessor Supervisory Reset Circuits with Edge-Triggered, One-Shot Manual Reset
Optoelectronic 光电
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 光电
Evaluation System/Evaluation Kit for the MAX6660 光电
|
Rubycon, Corp.
Fairchild Semiconductor, Corp.
DB Lectro, Inc.
Cypress Semiconductor Corp.
RECOM Electronic GmbH
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
