| PART |
Description |
Maker |
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system
Ignition IGBT 18 Amps, 400 Volts
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http://
ON Semiconductor
ONSEMI
|
| FGD3040G2 FGD3040G2F085 |
EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
EcoSPARK?2 300mJ, 400V, N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
| NGB8202NT4G NGB8202N_06 NGB8202N NGB8202NT4 NGB820 |
Ignition IGBT
|
ONSEMI[ON Semiconductor]
|
| NGB8206NTF4G |
Ignition IGBT
|
ON Semiconductor
|
| FGD3440G2F085 |
N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| NGB8204NT4 NGB8204NT4G NGB8204N |
Ignition IGBT 18 Amps, 400 Volts
|
ONSEMI[ON Semiconductor]
|
| ISL9V3040D3SL-TF3-T ISL9V3040D3SL-TA3-T |
300mJ, 400V, N-CHANNEL IGNITION IGBT
|
Unisonic Technologies
|
| NGB8207N NGB8207NT4G |
Ignition IGBT 20 A, 365 V, N−Channel D2PAK
|
ON Semiconductor
|
