| PART |
Description |
Maker |
| BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system
4.0 AMPERE POWER TRANSISTORS
Plastic Medium-Power Silicon NPN Darlingtons
DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
Motorola, Inc.
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| MJD200 MJD210 MJD200T4 MJD200-1 MJD210-1 MJD210T4 |
From old datasheet system
Complementary Plastic Power Transistors
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS 5 A, 25 V, PNP, Si, POWER TRANSISTOR
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MJE2955T |
Silicon NPN Power Transistors
Silicon PNP Power Transistors MJE2955T
Silicon PNP Power Transistors MJE2955T
|
Savantic, Inc.
|
| EMF5XV6T5 EMF5XV6T5G |
Power Management Dual Transistors
Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2SA963 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| 2SA483 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD242 BD242A |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD132 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
http://
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