| PART |
Description |
Maker |
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
| MB81V16160A-60 MB81V16160A-60L |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| UPD424400LA-80L |
CMOS 4M-Bit DRAM
|
ETC
|
| HY514400B |
1M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| NN514105A |
CMOS 4M x 1 Bit DRAM
|
NPN
|
| HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM536400A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536220A |
2M x 36-Bit CMOS DRAM Module
|
Hyundai
|
