| PART |
Description |
Maker |
| 2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2141 K2141 2SK2141JM |
N-channel enhancement type DMOS FET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK
Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET)
42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SJ555 |
0.036 ohm, POWER, FET
Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
| SSW1N60B SSI1N60B SSI1N60BTU SSW1N60BTM |
600V N-Channel B-FET / Substitute of SSW1N60A
500V N-Channel B-FET / Substitute of SSI1N60A
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
http://
|
