PART |
Description |
Maker |
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
MRF18085B MRF18085BLSR3 MRF18085BR3 |
RF Power Field Effect Transistors
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
MRF187 MRF187R3 MRF187SR3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|