PART |
Description |
Maker |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
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MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs 1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
MRF6S21100N |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
MRF6S19140H |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
MRF5P20180R6 MRF5P20180 |
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|
PMB5699 |
SMARTi U Single - Chip W-CDMA/UMTS Transceiver SMARTi U的单-收发器芯片W-CDMA/UMTS无线接入
|
Infineon Technologies A... Infineon Technologies AG
|
MRF5S21130HSR3 MRF5S21130HR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
|
Freescale (Motorola) Freescale Semiconductor, Inc 飞思卡尔半导体(中国)有限公司
|
MAX2306 MAX2308 MAX2309 MAX2308EGI MAX2306EGI |
CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer CDMA IF VGA及I/Q解调器,带有VCO及合成器
|
Maxim Integrated Products, Inc.
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
MAX1959 MAX1958 MAX1958ETP MAX1959ETP |
W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
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