| PART |
Description |
Maker |
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
| HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04
Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04
16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS |
DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC
DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料
1M X 16 EDO DRAM, 50 ns, PDSO44
|
Amphenol, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| EMP116MEAW EMP116MEAW-70E |
1Mx16 Pseudo Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N5VU1000F-DGCTC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MX29LV161BTI-70 MX29LV161BTI-70R MX29LV161BTI-90 M |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| OM1815NKM OM1812NKM OM1805NKM |
Hi-Rel Fixed Voltage 3-Terminal Positive Regulator
HERMETIC TO-3 FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS
|
International Rectifier
|
