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PCF85102C-2T03 - 256 x 8-bit CMOS EEPROM with I2C-bus interface PCF85102C-2; 256 x 8-bit CMOS EEPROM with I²C-bus interface

PCF85102C-2T03_175238.PDF Datasheet

 
Part No. PCF85102C-2T/03 PCF85102C-2P/03 PCF85102C-2T/0311 PCF85102C-2P/0311 PCF85102C-2P-03 PCF85102C-2T-03 PCF85102C-204
Description 256 x 8-bit CMOS EEPROM with I2C-bus interface
PCF85102C-2; 256 x 8-bit CMOS EEPROM with I²C-bus interface

File Size 102.88K  /  20 Page  

Maker

NXP Semiconductors N.V.
Philips



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Part: PCF85102C-2T/03,11
Maker: NXP Semiconductors
Pack: ETC
Stock: Reserved
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 Full text search : 256 x 8-bit CMOS EEPROM with I2C-bus interface PCF85102C-2; 256 x 8-bit CMOS EEPROM with I²C-bus interface


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PCF85102C-2T/03 PCF85102C-2P/03 PCF85102C-2T/0311 256 x 8-bit CMOS EEPROM with I2C-bus interface
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CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
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NVM3060 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
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IS24C02A-2ZI IS24C04A-2PI 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
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28C64AT/P 28C64ATI/L 28C64AFTI/SO 28C64AFI/SO 28C6 64K (8K x 8) CMOS EEPROM
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Microchip Technology Inc.
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24C64 M24C64 M24C64BN1T M24C64-BN3 M24C64-BN3P M24 20-Bit Bus-Interface D-Type Latch With 3-State Outputs 56-SSOP -40 to 85
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The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
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FUSE
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意法半导
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MAXIM INTEGRATED PRODUCTS INC
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
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Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
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Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
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