| PART |
Description |
Maker |
| PHP20NQ20T PHB_PHP20NQ20T_1 PHB20NQ20T PHP20NQ20T- |
N-channel TrenchMOS? transistor
N-channel TrenchMOS TM transistor
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN057-200B PSMN057-200B_1 |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK6226-75C BUK6226-75C-15 |
N-channel TrenchMOS FET
N-channel TrenchMOS FET Rev. 01 ?4 October 2010
|
NXP Semiconductors N.V.
|
| IRF530N |
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| PSMN035-150B PSMN035-150P |
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
|
| PHW80NQ10T PHW80NQ10T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHK5NQ10T PHK5NQ10T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK7524-55A BUK7624-55A BUK7624-55A118 |
TrenchMOS(tm) standard level FET
TrenchMOS TM standard level FET
TrenchMOS standard level FET 47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHKD3NQ10T PHKD3NQ10T_1 |
Dual N-channel TrenchMOS(tm) transistor
From old datasheet system
Dual N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
