| PART |
Description |
Maker |
| DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
|
| GP800DDM12 |
Hi-Reliability Dual Switch IGBT Module Advance Information 800 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| 1214-800P |
800 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXBH20N140 IXBH20N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor 20 A, 1400 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS Corporation
|
| MDI550-12A4 MID550-12A4 |
1200V IGBT module
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| BUK856-800A127 |
24 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP SEMICONDUCTORS
|
