| PART |
Description |
Maker |
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT641S8BKT M6MGB641S8BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| S71WS-NX0 S71WS512ND0BFWA23 S71WS512NC0BFWA23 S71W |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM50DLI28BG AM50DL128BG |
Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am50DL128BG -堆叠式多芯片封装（MCP）闪存和SRAM
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| R1111N R1111N181A R1111N181A-TL R1111N181A-TR R111 |
LOW NOISE 150mA LDO REGULATOR 3 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO5
Analog IC 模拟IC
RF inductor, tunable, not RoHS
FKCN 2,5/15-STF
Super Kit, 0402CS chip inductors, 2% tol, RoHS
GSMKDS 3/ 3
MKDS 3/ 3 KMGY (VPE 500)
FKCN 2,5/17-STF
Super Kit, 1008HQ chip inductors, 2% tol, RoHS
Analog IC - Datasheet Reference
|
Ricoh Co., Ltd.
RICOH[RICOH electronics devices division]
Ricoh Corp
|
| 1N5224B 1N5242B 1N5230B 1N5236B 1N5246B |
FKCVR 2.5/16-STF 技术规格玻璃硅稳压二极
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
|
DC Components Co., Ltd.
|
| DS42587 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| MB84VD22181FM-70 MB84VD22191FM-70 |
2-Stacked MCP
|
Fujitsu
|
| K524G2GACB-A050 |
MCP MEMORY
|
Samsung semiconductor
|
