| PART |
Description |
Maker |
| M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25P |
4 Mbit Uniform Sector, Serial Flash Memory
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE10 |
(M25PE10 / M25PE20) Page-Erasable Serial Flash Memories
|
ST Microelectronics
|
| M45PE10 M45PE10-VMN6G M45PE10-VMN6P M45PE10-VMN6TG |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
|
Numonyx B.V
|
| M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
COIL CHOKE 27MH .50A RADIAL 8兆位，低电压，页面与字节可擦除串行闪存更改性，50MHz的SPI总线，标准品
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V.
ST Microelectronics
|
| M45PE10-VMN6 M45PE10-VMN6G M45PE10-VMN6T M45PE10-V |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M25PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| PALC22V10D-15JC PALC22V10D-15JI PALC22V10D-25DMB P |
From old datasheet system
Flash Erasable, Reprogrammable CMOS PAL㈢ Device
Flash Erasable, Reprogrammable CMOS PAL垄莽 Device
Flash Erasable, Reprogrammable CMOS PAL庐 Device
Flash Erasable, Reprogrammable CMOS PAL? Device
|
Cypress Semiconductor
|
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
| IS93C46-3 IS93C46-3G IS93C46-3GI IS93C46-3GR IS93C |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 1,024位串行电可擦除可编程ROM
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
