PART |
Description |
Maker |
GS88418 |
8Mb12K x 18Bit) S/DCD Synchronous Burst SRAM(8M位(512K x 18位)可选单/双循环取消同步静态RAM(位脉冲地址计数)
|
GSI Technology
|
TC55WDM518AFFN15 TC55WDM518AFFN16 TC55WDM518AFFN20 |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
GS8180S18 |
1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的(100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
|
GSI Technology, Inc.
|
THMR1E4-6 THMR1E4-8 |
33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:600MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:600MHz 33554432词(64MBytes)由18位(32M的词× 18位)直接Rambus的内存(输入/输出频率00MHz的)400字节2兆字× 18位)直接Rambus公司动态内存模块(输入/输出频率00MHz的) 33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:800MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:800MHz 33554432词(64MBytes)由18位(32M的词× 18位)直接Rambus的内存(输入/输出频率00MHz的)400字节2兆字× 18位)直接Rambus公司动态内存模块(输入/输出频率00MHz的)
|
Toshiba, Corp.
|
HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge 7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM From old datasheet system 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM 75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存) x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics International Business Machines, Corp. Advanced Interconnections, Corp.
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HEF40162 HEF40162B HEF40162BD HEF40162BF HEF40162B |
Hex D-type flip-flop 4-bit synchronous decade counter with synchronous reset
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|