PART |
Description |
Maker |
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04 |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5867 |
MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC38V5964_97 MGFC38V5964 MGFC38V596497 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964_97 MGFC44V5964 MGFC44V596497 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5964A C425964A |
5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET From old datasheet system
|
Mitsubishi
|
MGFS45V2325A11 |
2.3-2.5 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
MGFS45A2527B MGFS45A2527B11 |
2.5-2.7 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|