| PART |
Description |
Maker |
| T436432B-5S T436432B-55S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M563233G K4M563233G-FN_G60 K4M563233G-FL_F60 K4M |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| K4M283233H K4M283233H-FG60 K4M283233H-FG75 K4M2832 |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung semiconductor
|
| H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
| K4S283233F-M |
1M x 32Bit x 4 Banks SDRAM in 90 FBGA Data Sheet
|
Samsung Electronic
|
| K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF- |
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M28323PH-F K4M28323PH-FC_F K4M28323PH-FE_G K4M28 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Elite Semiconductor Memory Technology, Inc.
Samsung semiconductor
|
| W986432DH |
SDRAM 2Mx32
512K ′ 4 BANKS ′ 32 BITS SDRAM
|
Winbond Electronics
|
| WED9LAPC2C16V8BC WED9LAPC2C16V8BI |
512K x 32 SSRAM / 1M x 64 SDRAM
|
White Electronic Designs Corporation
|
