| PART |
Description |
Maker |
| CY39100V388B-125MGC CY39165V484-181BBC CY39200V484 |
Development Software
Delta39K ISR CPLD. Speed 125 MHz.
Delta39K ISR CPLD. Speed 181 MHz.
Delta39K ISR CPLD. Speed 83 MHz.
|
Cypress
|
| Y30-48S5-12-JI Y30-24S5-12-JI Y30-24S5-15 Y30-48S5 |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
5V, 3.3V, ISR™ High-Performance CPLDs 模拟IC
MoBL® 8-Mbit (512K x 16) Static RAM 模拟IC
MoBL® 2-Mbit (128K x 16) Static RAM 模拟IC
|
SIEMENS AG
ITT, Corp.
Aimtec
|
| FU-632SEA-3M43A FU-632SEA-3M25A FU-632SEA-6M25A FU |
Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
Replaced by PTH03020W :
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
1.55 um EAM/DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(WDM) 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块
Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| CY3600I 3600I |
FLASH370i ISR?Programming Kit
From old datasheet system
|
Cypress
|
| SST39LF010-90-4I-NH SST39VF020-70-4C-NK SST39LF010 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
Hexadecimal and Numeric DIsplays for Industrial Applications
SMT TAPE AND REEL RELAY
Replaced by PT78ST212 : 12Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
EN60950 Relay
Replaced by PT6302 : 5Vout 3Amp Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 70
LED Light Bars
7.62 mm (0.3 inch) Single Digit General Purpose Seven Segment Display
PCB Relay; Contacts:DPDT; Contact Carry Current:2A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Coil Resistance:125ohm; Coil Power VDC:200mW; Relay Mounting:PC Board RoHS Compliant: Yes 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
10 mm (0.4 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
10.9 mm (0.43 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
10-Element Bar Graph Array 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
Replaced by PT78ST165 : 6.5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位（8）多用途闪
Replaced by PT78HT205 : 5Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
Replaced by PT78HT233 : 3.3VOUT 2A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE -40 TO 85 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
Replaced by PT6213 : 3.45Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位（8）多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 90 ns, UUC
64K X 8 FLASH 2.7V PROM, 90 ns, UUC
|
Silicon Storage Technology, Inc.
Silicon Storage Technology Inc
Cinch Connectors
Microchip Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technol...
|
| CAT34WC02J-TE13 CAT34WC02PA-1.8TE13 CAT34WC02PA-TE |
13-Bit to 26-Bit Registered Buffer PC2700-/PC3200-Compliant
2K-Bit I2C Serial EEPROM, Serial Presence Detect
1-Mb (64K x 16) Static RAM
2K-Bit I2C Serial EEPROM/ Serial Presence Detect
1:4 Clock Fanout Buffer
5V, 3.3V, ISR™ High-Performance CPLDs
I2C Serial EEPROM I2C串行EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M3 |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8
VALVE SHUT OFF 1/8 阀门关闭了1 / 8
VALVE STARTUP 1/2 阀门启 / 2
VALVE SHUT OFF 1/4 阀门关闭了1 / 4
VALVE SHUT OFF 3/4
VALVE STARTUP 1/4
IC SRAM 512KX36 2.5V SYN 100TQFP
VALVE SHUT OFF 1/2
BRACKET T
1-Mbit (128K x 8) Static RAM
IC MCU 8K FULL SPEED USB 28SDIP
BRACKET L
1M/512K FAST ASYNC SRAM
5V, 3.3V, ISR™ High-Performance CPLDs
256K (32K x 8) Static RAM
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
SPACER
EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1-Mbit (64K x 16) Static RAM
2M x 8 Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture
BRANCH UNIT
|
AMIC Technology, Corp.
Vishay Intertechnology, Inc.
NXP Semiconductors N.V.
Harwin PLC
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| CY39100V388B-83MGC CY39100V208B-125NTXC CY39050V20 |
Delta39K™ ISR™ CPLDs at FPGA Densities™ LOADABLE PLD, 15 ns, PBGA388
Delta39K™ ISR™ CPLDs at FPGA Densities™ LOADABLE PLD, 10 ns, PQFP208
CPLDs at FPGA Densities LOADABLE PLD, 10 ns, PQFP208
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Cypress Semiconductor, Corp.
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| EVDXXXX EVD9P2S5ZT20 EVD15F00000 EVD15F0000S EVD15 |
Quad 2-input positive-AND gates 14-SOIC 0 to 70
Hex inverters with open collector outputs 14-SOIC 0 to 70
Replaced by PTH05020W : 1.075 TO 1.85V 20-A 5V-INPUT PROGRAMMABLE ISR 27-SIP MODULE -40 TO 85
Replaced by PT6911 :
16-Bit Schottky Barrier Diode Bus-Termination Array 20-PDIP 0 to 70
Coaxial Cable; Coaxial RG/U Type:405; Impedance:50ohm; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 军事素质可去联系，微 D连接
Coaxial Cable; Impedance:50ohm; Conductor Size AWG:29; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 军事素质可去联系，微 D连接
3.3-V ABT Octal Registered Transceivers With 3-State Outputs 24-SOIC -40 to 85 军事素质可去联系，微 D连接
Coaxial Cable; Impedance:75ohm; Conductor Size AWG:29; No. Strands x Strand Size:Solid; Leaded Process Compatible:Yes RoHS Compliant: Yes 军事素质可去联系，微 D连接
CONN HEADR 100PS DL .05 R/A SMD 军事素质可去联系，微 D连接
3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系，微 D连接
2.5V/1.5V, 6A 6A 5V/3.3V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
128 x 128 pixel format, LED Backlight available 军事素质可去联系，微 D连接
3.3-V ABT Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 军事素质可去联系，微 D连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 军事素质可去联系，微 D连接
3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-TSSOP -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SO -40 to 85 军事素质可去联系，微 D连接
Quad 2-input positive-NAND gates 14-PDIP 0 to 70 军事素质可去联系，微 D连接
3.3V/1.8V 10 Amp 5V-Input Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
3.3/1.5Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
2.5V/1.8V, 6A 6A 5V/3.3V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
3.3V/2.5V 11 Amp 5V-Input Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
3.3/2.5Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
Octal Buffers and Line Drivers With 3-State Outputs 20-PDIP 0 to 70 军事素质可去联系，微 D连接
3-line to 8-line decoder / demultiplexer 16-SOIC 0 to 70 军事素质可去联系，微 D连接
Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 军事素质可去联系，微 D连接
Hex Inverters 14-TSSOP -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SOIC -40 to 85 军事素质可去联系，微 D连接
Quad 2-input positive-NAND gates 14-SO 0 to 70 军事素质可去联系，微 D连接
Triple 3-input positive-NAND gates 14-SO 0 to 70 军事素质可去联系，微 D连接
3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-BGA MICROSTAR JUNIOR -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Transparent D-Type Latches With 3-State Outputs 20-SO -40 to 85 军事素质可去联系，微 D连接
Hex Inverters 14-VQFN -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SSOP -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系，微 D连接
3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 军事素质可去联系，微 D连接
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-16 军事素质可去联系，微 D连接
12-Bit Schottky Barrier Diode Bus-Termination Array 16-SOIC 0 to 70 军事素质可去联系，微 D连接
Hex inverters 14-PDIP 0 to 70 军事素质可去联系，微 D连接
Hex inverters 14-SOIC 0 to 70 军事素质可去联系，微 D连接
POT 200K OHM THUMBWHEEL CERM ST 军事素质可去联系，微 D连接
; Sensor Input Type:Laser; Sensing Range Max:1m 军事素质可去联系，微 D连接
DIODE SWITCHING DUAL COMMON-ANODE 75V 150mA-Io 200mW 4ns-trr SOT-323 3K/REEL 军事素质可去联系，微 D连接
3.3V/1.2V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系，微 D连接
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-91 军事素质可去联系，微 D连接
DIODE ZENER SINGLE 200mW 9.1Vz 5mA-Izt 0.0608 0.5uA-Ir 6 SOD-323 3K/REEL 军事素质可去联系，微 D连接
-5.2Vout 12W 5V-Input Adjustable Plus to Minus Voltage Converter 23-SIP MODULE 0 to 85 军事素质可去联系，微 D连接
-5.2Vout 12W 3.3V-Input Adjustable Plus to Minus Voltage Converter 23-SIP MODULE 0 to 85 军事素质可去联系，微 D连接
MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS 军事素质可去联系，微 D连接
; Interface Type:Serial, SPI; Kit Contents:Evaluation Board, 32K RAM, 8K EEPROM, DB-9 Serial Cable, CD, Documents; For Use With:MC68HC11E9 军事素质可去联系，微 D连接
Dual 4-input positive-NAND 50-Ohm line drivers 14-PDIP 0 to 70
Dual 4-input positive-NAND 50-Ohm line drivers 14-SOIC 0 to 70
Quad 2-input positive-NAND gates 14-SOIC 0 to 70
3.3-V ABT 32-Bit Edge-Triggered D-Type Flip-Flop with 3-State Outputs 96-LFBGA -40 to 85
3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85
3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SO -40 to 85
3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SSOP -40 to 85
3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85
Replaced by PTH12010W,PTH08T220W : 1.1 to 1.85V 14A 12V-Input Programmable ISR 23-SIP MODULE
Replaced by PTH05010W,PTH08T220W :
3.3V/2.5V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85
3.3/1.8Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85
SMT-AL(V-CHIP) RoHS Compliant: NA
3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-TSSOP -40 to 85
Dual voltage-controlled oscillators 16-SOIC 0 to 70
Octal buffers and line drivers 20-SOIC 0 to 70
3.3V/1.8V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85
Hex inverters with open collector outputs 14-SO 0 to 70
DISC CERAMIC CAPACITOR
Replaced by PTN78020H :
Replaced by PTN78020W :
MILITARY QUALITY REMOVABLE CONTACT, CONNECTORS
MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS
|
List of Unclassifed Man...
List of Unclassifed Manufac...
Murata Manufacturing Co., Ltd.
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
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FAIRCHILD[Fairchild Semiconductor]
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