| PART |
Description |
Maker |
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM1214-175 2705 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM80814-005 |
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
| AM81214-030 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLL6H1214LS-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier
|
Philips Semiconductors
|
| BLS6G3135-12008 BLS6G3135-120-15 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
