| PART |
Description |
Maker |
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| W24L11S-70L W24L11S-70LL W24L11T-70LL W24L11 W24L1 |
128K X 8 High Speed CMOS Static RAM
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Blue; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
TRANS NPN W/RES 210 HFE NS-B1 128K X 8 STANDARD SRAM, 70 ns, PDIP32
TRANS NPN W/RES 30 HFE NS-B1 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| GM9012 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| BDY23A BDY25A BDY25B BDY25C |
Trans GP BJT NPN 60V 6A 3-Pin(2 Tab) TO-3
Trans GP BJT NPN 140V 6A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| ISD4003-06MEI ISD4003-06MPI ISD4003-06MXD ISD4003- |
240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
RES 150K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations 单芯片语音记播放设备4 - - 6 - ，和8分钟工期
RES 130K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
RES 100 OHM 1/6W 5% CARBON FILM
RES 13 OHM 1/6W 5% CARBON FILM
RES 110K OHM 1/6W 5% CARBON FILM
RES 13K OHM 1/6W 5% CARBON FILM
CAP 1000PF 1KV CERAMIC X7R 1812
|
WINBOND ELECTRONICS CORP
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| BUX87 BUX86 Q68000-A5167 Q68000-A3870 |
TRANS PREBIASED NPN 150MW SOT523
NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
