| PART |
Description |
Maker |
| W24L11S-70L W24L11S-70LL W24L11T-70LL W24L11 W24L1 |
128K X 8 High Speed CMOS Static RAM
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Blue; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
TRANS NPN W/RES 210 HFE NS-B1 128K X 8 STANDARD SRAM, 70 ns, PDIP32
TRANS NPN W/RES 30 HFE NS-B1 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26
TRANS NPN BIPOLAR 300MW SOT26
TRANS PNP BIPOLAR 300MW SOT26
TRANSISTOR NPN 40V SOT363
High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Round Solutions
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| GM9013 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| V23870-A1131-B600 V23870-A3132-K600 V23870-A1131-A |
Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx; pigtail
Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx, ext. Temp. Range; pigtail
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx
TRANS PREBIASED NPN 200MW SOT23
TRANS PREBIASED NPN 200MW SOT323
Metalized Polyester Film Radial Lead Capacitor; Capacitance: .22uF; Voltage: 630V; Case Size: 18.5x14.8 mm; Packaging: Bulk
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s, 1310 nm Tx / 1550 nm Rx 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
TRANS PREBIASED NPN 150MW SOT523 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
TRANS PREBIASED NPN SOT323 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
DIODE ZENER SINGLE 500mW 9.7Vz 20mA-Izt 0.0254 0.1uA-Ir 8 SOD-123 3K/REEL 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
|
INFINEON[Infineon Technologies AG]
http://
Infineon Technologies A...
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
NPN SILICON PLANAR TRANSISTOR
|
Continental Device India Limited
|
| 2N5229 2N5230 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
|
New Jersey Semiconductor
|
