| PART |
Description |
Maker |
| TC55VDM536AFFN15 TC55VDM536AFFN22 TC55VDM536AFFN16 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N161801M K7N163601M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N161831B-QFCI25 K7N163631B-QFCI25 |
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| FCA76N60N |
N-Channel SupreMOSMOSFET 600V, 76A, 36m
|
Fairchild Semiconductor
|
| K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
| GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
