| PART |
Description |
Maker |
| DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N321845M-QC25 K7N321845M-QC20 K7N321801M-QC20 K7 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N321801M-FC16 K7N321801M-FC20 K7N321801M-QC13 K7 |
1MX36 & 2MX18 PIPELINED NTRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65 |
COMPUTER PRODUCT 256Kx36
256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36
Connector assemblies, Audio/RF/Video cables;
DELUX AUDIO RIGHT ANGLE CABLE
256Kx36 & 512Kx18-Bit Flow Through NtRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7M163635B-PC65 K7M163635B-PI65 K7M163635B-QI65 K7 |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7M801825A K7M803625A |
256Kx36 & 512Kx18 Flow-Through NtRAM TM
|
Samsung semiconductor
|
| IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM
1.8V 2M x 9 QDR II PipeLined SRAM
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 2M x 8 QDR II Pipelined SRAM
18Mb Pipelined QDR II SRAM Burst of 4
|
IDT
http://
|
