| PART |
Description |
Maker |
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CPH6519 |
NPN NPN
NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
|
Sanyo Semicon Device
|
| PEMH15115 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| PEMH9 PIMH9 PUMH9 PUMH9125 |
NPN-NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=10千欧姆，R2=47千欧
NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
NPN/NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=2.2千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| BC618 ON0154 BC618RL BC618ZL1 |
Darlington Transistor NPN
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Darlington Transistors(NPN Silicon) 1000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
ON Semiconductor
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3
晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 40V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一c）|11
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 10A条一（c）|10AC
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五（巴西）总裁| 10A条一（c）|10AC
|
Serpac Electronic Enclosures
Atmel, Corp.
AUK, Corp.
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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