| PART |
Description |
Maker |
| W29F102P-50 W29F102P-50B W29F102Q-45 W29F102Q-45B |
64K 16 CMOS FLASH MEMORY
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 55 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 50 ns, PDSO40
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| W29F102Q-70B W29F102 W29F102P-45 W29F102P-45B W29F |
64K 16 CMOS FLASH MEMORY
|
WINBOND[Winbond]
|
| W29EE512Q-70 W29EE512Q-70B W29EE512Q-90 W29EE512Q- |
64K X 8 CMOS FLASH MEMORY
|
Winbond Electronics
|
| V29C51000B V29C51000T V29C51000B-45P V29C51000B-45 |
64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
|
| AN28F512-120 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corp.
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| AT49F1025 AT49F1025-45JC AT49F1025-45VC AT49F1025- |
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TVSOP -40 to 85
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TSSOP -40 to 85 64K X 16 FLASH 5V PROM, 45 ns, PQCC44
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 45 ns, PDSO40
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 55 ns, PDSO40
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TSSOP -40 to 85 64K X 16 FLASH 5V PROM, 55 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT49LV1024A AT49LV1024A-45VC AT49LV1024A-45VL |
1M bit, 64K x 16, 3-Volt Read and 3-Volt Write Flash
1-megabit (64K x 16) 3-volt Only Flash Memory
|
ATMEL[ATMEL Corporation]
|
