| PART |
Description |
Maker |
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存）
CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| V53C8125H V53C8125H30 V53C8125H35 V53C8125H40 V53C |
Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM
ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
OSC 3.3V SMT 7X5 CMOS 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
ULTRA-HIGH PERFORMANCE/ 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IC41C16105 IC41LV16105 IC41LV16105-60TI IC41C16105 |
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 100万166兆）动态RAM的快速页面模
DYNAMIC RAM, FPM DRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ICSI
ETC[ETC]
Integrated Circuit Solution Inc
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| IC41C16105S IC41LV16105S IC41C16105S-50K IC41C1610 |
DYNAMIC RAM, FPM DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| MB81V16165A-60L |
CMOS 1M ×16 Bit Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页存取模式动态RAM)
|
Fujitsu Limited
|
| MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM
1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
