| PART |
Description |
Maker |
| IC42S81600-8TG IC42S81600L-8TG IC42S16800L-8TG IC4 |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行128 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 816）位× 4银行28 - Mbit的）同步动态RAM
IC DUAL SPDT ANALOG SW 16-SOIC
Single/Dual Supply, Quad SPDT Switch
Single/Dual Supply, Quad SPST Switch
ER 14C 14#16 SKT PLUG
RES 10K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
|
Electronic Theatre Controls, Inc.
Toshiba, Corp.
Microchip Technology, Inc.
Integrated Circuit Solution Inc
Integrated Circuit Solu...
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| HYB18T256400AF HYB18T256400AF-3 HYB18T256400AF-37 |
256 Mbi t DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB18T256160AFL-37 HYB18T256160A-3S HYB18T256160AF |
256 Mbi t DDR2 SDRAM
|
Infineon Technologies A...
|
| CAT24C00JITE13 CAT24C00LETE13 CAT24C00LITE13 CAT24 |
320 x 240 pixel format, Chip-On-Glass Technology
CONNECTOR ACCESSORY
From old datasheet system
128-bit Serial EEPROM
128-bit, 100 kHz @ 1.8 V & 400 kHz @ 5.0 V, 5-pin SOT23 Package
|
Catalyst Semiconductor
|
| HM538123BJ-10 HM538123BJ-6 HM538123BJ-8 |
100ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
60ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
80ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
|
Hitachi Semiconductor
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 24LC00T-EP 24LC00T-ESN 24LC00T-EOT 24LC00T-EST 24L |
CAP CER 100PF 100V 10% RADIAL 128位的I 2 C？总线串行EEPROM
CAP 100PF 100V 10% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD 128位的I 2 C？总线串行EEPROM
128 Bit I 2 C Bus Serial EEPROM 128位的I 2 C？总线串行EEPROM
CONNECTOR ACCESSORY
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7
128 Bit I2C Bus Serial EEPROM
128 Bit I 2 C? Bus Serial EEPROM
|
HIROSE ELECTRIC Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
