| PART |
Description |
Maker |
| KMM53632000BKG KMM53632000BK |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616004CK KMM53616004CKG |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
| KMM372V3280CK4 KMM372V3200CK4 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HSD32M32M4V-F10 HSD32M32M4V-F10L HSD32M32M4V-F12 H |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块）
|
International Business Machines, Corp.
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
