| PART |
Description |
Maker |
| DPZ128X32VAP-25C DPZ128X32VAP-25I DPZ128X32VIP-20C |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Air Cost Control
|
| DPZ128X32VI-25M DPZ128X32VI-20M DPZ128X32VI-17M DP |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Glenair, Inc.
SPC Technology
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| PUMA2E1000LM-90/X405 PUMA2E1000LI-70 PUMA2E1000I-7 |
x32 EEPROM Module X32号的EEPROM模块
|
PUI Audio, Inc.
|
| PUMA2E4001I-17 PUMA2E4001-17 PUMA2E4001M-17 |
x32 EEPROM Module X32号的EEPROM模块
|
Rohm Co., Ltd.
|
| 5962-9461003HYC 5962-9461003HYA 5962-9461003HZC 59 |
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and ±15kV ESD Protection
Single/Dual/Quad High-Side Current-Sense Amplifiers with Internal Gain
Ultra-Small, Low-Cost, 210MHz, Single-Supply Op Amps with Rail-to-Rail Outputs and Disable
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Vishay Intertechnology, Inc.
|
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CMS68F256-250 CMS68F1MB-250 CMS68F2MB-250 CMS68F51 |
x8/x16 Flash EEPROM Module x8/x16闪存EEPROM模块
|
Actel, Corp.
|
| WF128K32-50H1C5A WF128K32-50G2UC5 WF128K32-50G1TI5 |
EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC
EEPROM|FLASH|128KX32|CMOS|PGA|66PIN|CERAMIC
EEPROM EEPROM
|
Aeroflex, Inc.
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| E28F002BX-T70 PA28F200BX-T70 E28F002BX-B70 PA28F20 |
x8/x16 Flash EEPROM
x8 Flash EEPROM x8闪存EEPROM
|
Intel, Corp.
|
