| PART |
Description |
Maker |
| DL-3038-011 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|
| DL-3149-054 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| DL-3148-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| DL-3147-141 |
Index Guided AlGaInP Laser Diode(变址导向AlGaInP激光二极管) 指数导铝镓铟磷激光二极管（变址导向铝镓铟磷激光二极管
|
Sanyo Electric Co., Ltd.
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| HL6328MG HL6327MG |
AlGaInP Laser Diodes
|
OPNEXT[Opnext. Inc.]
|
