| PART |
Description |
Maker |
| AS8E128K32P-120_883C AS8E128K32P-140_883C AS8E128K |
128K x 32 EEPROM Memory Array
|
AUSTIN[Austin Semiconductor]
|
| AS8E128K32Q-15IT |
128K x 32 EEPROM radiation tolerant memory array
|
Austin Semiconductor
|
| HN58X24256FPIE HN58X24256I HN58X24256TIE HN58X2412 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| 5962-9089903MTX 5962-9089903MUX 5962-9089903MXX 59 |
SOLID TANTALUM RoHS Compliant: Yes
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路，存储器，DIGITAA型，CMOS128K的8位闪存EEPROM存储器，单片
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路，存储器，DIGITAA型，CMOS28K的8位闪存EEPROM存储器，单片
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| M28010-15WKA6 M28010-15WBA1 M28010-20RBA6 M28010-1 |
128K X 8 EEPROM 3V, 150 ns, PQCC32
128K X 8 EEPROM 3V, 150 ns, PDIP32
128K X 8 EEPROM 3V, 200 ns, PDIP32
128K X 8 EEPROM 3V, 100 ns, PDIP32
|
STMICROELECTRONICS
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
| AT28C010-12TU AT28C010E-15JU |
120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDSO32
150NS, PLCC, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 150 ns, PQCC32
|
Atmel, Corp.
|
| 5962-3826707 5962-3826705 5962-3826701 |
128K x 8 EEPROM, MIL-STD-883C, 120ns
128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns
128K EEPROM MIL-STD-883, 250ns
|
Intersil
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM
1K/2K/4K SPI Serial CMOS EEPROM
16K-Bit CMOS PARALLEL EEPROM
64K-Bit CMOS PARALLEL EEPROM
512K-Bit CMOS Flash Memory
32K/64K-Bit SPI Serial CMOS EEPROM
1 Megabit CMOS Flash Memory
512K-Bit CMOS PARALLEL EEPROM
1 Megabit CMOS Boot Block Flash Memory
256K-Bit CMOS PARALLEL EEPROM
Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
Precision, Adjustable Shunt Regulator
Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
128K/256K-Bit SPI Serial CMOS EEPROM
16K-Bit Serial EEPROM, Cascadable
|
CATALYST[Catalyst Semiconductor]
|
| AM29F010B-90JI AM29F010B-120EC AM29F010B-120EI AM2 |
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
|
Advanced Micro Devices, Inc.
|
|
