| PART |
Description |
Maker |
| HS2-2620RH-Q HS-2620RH HS-2622RH HS2-2622RH-Q HS7B |
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 6000 uV OFFSET-MAX, MBCY8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 4000 uV OFFSET-MAX, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened/ Very Wideband/ High Input Impedance Uncompensated Operational Amplifiers
Radiation Hardened, Very Wideband, High
Input Impedance Uncompensated
Operational Amplifiers(抗辐射、宽带、高输入阻抗、低输入偏置电流非补偿性运算放大器)
|
Intersil, Corp.
Intersil Corporation
|
| CA2830C CA2830 |
RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp or Solder; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:9, 9A, 9B, 214
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
|
Motorola, Inc.
|
| CN-0217 AD8606 AD5933 AD5934 |
High Accuracy Impedance Measurements Using 12-Bit Impedance Converters
|
Analog Devices
|
| S78L05F S78LXXF S78L06F S78L08F S78L09F S78L10F S7 |
Ferrite Bead; Series:LF BK; Resistance:0.2ohm; Package/Case:0603; Features:HM; Ferrite Grade:HM; Frequency:100MHz; Frequency Max:300MHz; Impedance:120ohm; Impedance Tolerance: /- 25 Percent; Leaded Process Compatible:Yes RoHS Compliant: Yes 正电压稳压器
Positive-Voltage Regulators
|
AUK, Corp.
AUK[AUK corp]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 108ACZ010M 336ACZ010M 157ACZ010M 687ACZ016M 227ACZ |
105隆?C Very Low Impedance Surface Mount Aluminum Electrolytic Capacitors
105掳C Very Low Impedance Surface Mount Aluminum Electrolytic Capacitors
105°C Very Low Impedance Surface Mount Aluminum Electrolytic Capacitors
|
Illinois Capacitor, Inc.
Illinois Capacitor, Inc...
|
| IRF7910PBF08 IRF7910PBF-15 IRF7910TRPBF |
HEXFET Power MOSFET
Ultra-Low Gate Impedance
Ultra-Low Gate Impedance
|
International Rectifier
|
| BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFR93AW |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
