| PART |
Description |
Maker |
| IDT72V70200 72V70200_DS_72847 IDT72V70200PQF IDT72 |
512 x 512 TSI, 16 I/O at 2Mbps, 3.3V
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20 |
512 X 8 NON-VOLATILE SRAM, 30 ns, PDIP28
CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM 高性能的CMOS非易12 × 8非易失性静态RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
SIMTEK
Electronic Theatre Controls, Inc.
|
| GS78116A |
8Mb Async SRAMs
|
GSI Technology
|
| MT55L512L18P MT55L256L36P |
8Mb ZBT SRAM
|
MICRON[Micron Technology]
|
| MT55L256L32F MT55L512L18F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| 80546KF |
64 Bit Processor
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache 64位Intel Xeon处理MP的高MB三级高速缓
|
Intel Corp.
Intel, Corp.
|
| GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
