| PART |
Description |
Maker |
| M12L64322A-5BG2U M12L64322A-5TG2U M12L64322A-6BG2U |
512K x 32 Bit x 4 Banks
|
Elite Semiconductor Memory Technology Inc.
|
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
| HY67V161610D HY67V161610DTC HY67V161610DTC-10 HY67 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| VDS4616A4A-7 VDS4616A4A VDS4616A4A-5 VDS4616A4A-6 |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
|
A-DATA[A-Data Technology]
|
| IC42S16101-6T |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solu...
|
| M12L64322A-7T M12L64322A-6T |
512K x 32 Bit x 4 Banks Synchronous DRAM
PT 5C 5#16 SKT RECP
|
Electronic Theatre Controls, Inc.
|
| HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| A43L0632G-6F A43L0632G-7F A43L0632G-6UF A43L0632G- |
512K X 32 Bit X 2 Banks Synchronous DRAM 12k × 32位2银行同步DRAM
|
AMIC Technology Corporation
http://
AMIC Technology, Corp.
TM Technology, Inc.
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
