| PART |
Description |
Maker |
| FMM60-02TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FT0021 FT0021-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, I...
|
| IXFK420N10T IXFX420N10T |
GigaMOS Trench HiperFET Power MOSFET
|
IXYS Corporation
|
| IXFN420N10T |
GigaMOS Trench HiperFET Power MOSFET
|
IXYS Corporation
|
| FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
| PSTG75HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
| SFF85N06Z |
55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc.
|
| CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
