| PART |
Description |
Maker |
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
| HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 |
64M(4Mx16) DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV065B |
64M-Bit CMOS Flash Memory
|
Macronix
|
| MX29LV065 |
64M-Bit CMOS Flash Memory
|
Macronix
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420M |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX25L6402 MX25L6402MC-40 MX25L6402MC-40G |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
MCNIX[Macronix International]
|
| MX28F640C3BBTC-12 MX28F640C3BBTC-90 MX28F640C3BT M |
64M-BIT [4M X16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
