| PART |
Description |
Maker |
| HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
http://
ETC[ETC]
|
| HYM72V16M636BT6 HYM72V16M636BLT6-K HYM72V16M636BLT |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
| HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| GMM27316230ETG GMM27316233ENTG-7K |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|75/7K|x18|SDR SDRAM - Registered DIMM 128MB 16Mx72 | 3.3 | 75/7K | x18 | SDRAM的特别提款权-注册128MB的内
|
ITT, Corp.
Mini-Circuits
|
| W3DG6417V7D2 W3DG6417V10D2 W3DG6417V75D2 W3DG6417V |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
