PART	Description	Maker
R1QFA7218AB R1QCA7218AB R1QCA7236AB R1QLA7236AB R1	72-Mbit QDRII SRAM 4-word Burst	Renesas Electronics Corporation
CY7C1565V18-300BZI	72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165	Cypress Semiconductor, Corp.
CY7C1263KV18-400BZC CY7C1265KV18-550BZC	36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)	Cypress
R1QKA3618CBG R1QKA3636CBG R1QLA3636CB R1QLA3618CB	36-Mbit QDRII SRAM 4-word Burst 36-Mbit QDRII SRAM 4-word Burst	Renesas Electronics Corporation
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J-	18-Mbit QDR™-II SRAM 4-Word Burst Architecture 18-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM	Analog Devices, Inc.
CY7C2262XV18 CY7C2264XV18 CY7C2262XV18-366BZXC	36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR? II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT	Cypress Semiconductor
UPD44165084 UPD44165084F5-E60-EQ1 UPD44165364F5-E6	18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM4个字爆发运作 18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM个字爆发运作	NEC Corp. NEC, Corp.
UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5	36M-BIT QDRII SRAM 2-WORD BURST OPERATION	NEC Corp.
UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441	18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运	NEC Corp. NEC, Corp.
R1Q3A3609BBG-60R R1Q3A3636BBG-60R R1Q3A3636BBG-50R	36-Mbit QDR垄芒II SRAM 4-word Burst 36-Mbit QDR?II SRAM 4-word Burst	Renesas Electronics Corporation http://
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H	Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst	Renesas Technology / Hitachi Semiconductor

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