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K7K1636U2C - 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

K7K1636U2C_810910.PDF Datasheet


Part No.	K7K1636U2C K7K1618U2C
Description	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
File Size	415.85K / 19 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

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IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
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K7Q163652A K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7K3236T2C K7K3218T2C	1Mx36 & 2Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
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K7S1636T4C K7S1618T4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
K7S1636U4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor

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