| PART |
Description |
Maker |
| SLD-1000 |
4 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| 0809LD60 |
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT 28V 1 GHz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0809LD120 |
120 Watt / 28V / 1 Ghz LDMOS FET
120 WATT 28V 1 GHz LDMOS FET
120 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
| SYC130 NEC256 SHC130 SEC130 SGC130 SRC130 NEC250 S |
LED Displays
Optoelectronic
From old datasheet system
Intel® 82566MC Gigabit Ethernet PHY, Single Port, Pb-Free 2LI, FCBGA, Tray
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0659-0 05; No. of Positions: 18; Connector Type: Wire
(degrees C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Inch type screw; MIL-C-24308
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Locking device with rectangular mating locking base; Through hole
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Field-mounting locking device; PCB locking clip; MIL-C-24308
Optoelectronic 光电
|
IDEA
NEC
AME, Inc.
Sanken Electric Co., Ltd.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MPSW45_D MPSW45A ON2353 MPSW45 |
One Watt Darlington Transistors(NPN Silicon)
*Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
