PART |
Description |
Maker |
HM62W16256BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V16514LTTI/LTTI-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V16256CLTT/CLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
N64S0818HDA N64S0830HDA N64S08XXHDA |
64Kb Low Power Serial SRAMs 8K × 8 bit Organization 64Kb Low Power Serial SRAMs 8K 8 bit Organization 64Kb Low Power Serial SRAMs 8K 】 8 bit Organization
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AMI SEMICONDUCTOR
|
N25S818HA |
256Kb Low Power Serial SRAMs 32K X 8 bit Organization
|
ON Semiconductor
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IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset RELAY 024VDC 01A DPDT-XX FORM:2C UC Bi-Lobe Standard Metal Shell Nano Offset Connector Low Power 5V/3.0V P Reset Low Power/ 5V/ P Reset Low Power, 5V, 楼矛P Reset Low Power 5V P Reset Low Power, 5V, P Reset Low Power, 5V, μP Reset 4.375V power reset
|
IMP INC. IMP Inc IMP[IMP, Inc] IMP[IMP Inc]
|
GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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