| PART |
Description |
Maker |
| GLT41016 |
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
G-Link Technology
|
| A426316B A426316BS A426316BS-30 A426316BS-30L A426 |
64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| IS61C6416AL-12TI-TR IS64C6416AL-15TLA3 IS65C6416AL |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
List of Unclassifed Manufac...
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| CY7C187 CY7C187-15PC CY7C187-15VC CY7C187-20PC CY7 |
64K x 1 Static RAM 64K X 1 STANDARD SRAM, 15 ns, PDIP22
64K x 1 Static RAM 64K的1静态RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
