PART |
Description |
Maker |
AN1227 |
IMPROVED RF MOSFET RELIABILITY THROUGH PACKAGING ENHANCEMENTS
|
SGS Thomson Microelectronics
|
NPS40 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
AP02N70EJ-HF AP02N70EJ-HF14 |
ESD Improved Capability N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics Corp.
|
CA3130 CA3130A |
Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 15MHz, Improved Input Characteristics
|
Intersil
|
CA5260A |
Op Amp, BiMOS, Dual, 5V Supply, MOSFET Input, CMOS Outputs, 3MHz, Improved Input Characteristics
|
Intersil
|
CA329004 CA3290E CA3290 CA3290A CA3290AE |
Comparator, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, Improved Input Characteristics BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output
|
INTERSIL[Intersil Corporation]
|
DMN6070SFCL-15 DMN6070SFCL-7 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET Qualified to AEC-Q101 standards for High Reliability
|
Diodes Incorporated
|
DMN4008LFG-7 DMN4008LFG-13 DMN4008LFG-15 DMN4008LF |
40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI? Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
LM4040AIM3-2.1-T LM4040AIM3-2.5-T LM4040AIM3-3.0-T |
2.048 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage 2.5 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage 3.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage 4.096 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage 5.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage 3.3 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
|
MAXIM - Dallas Semiconductor
|
SML012BC4T SML-012U8T SML013WBDW SML012EC4T SML-01 |
SML-01 Series Reflector improved the concentration of viewing angle SML-01 Series Reflector improved the concentration of viewing angle
|
Rohm http://
|
IRFS640A |
Improved gate charge
|
Samsung semiconductor
|