| PART |
Description |
Maker |
| SI4955DY-T1-E3 SI4955DY05 SI4955DY |
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
|
VISAY[Vishay Siliconix]
|
| SI4926DY |
Asymentrical Dual N-Channel 30-V (D-S) MOSFET
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
|
VISAY[Vishay Siliconix]
|
| CM9320-01DE CM9320 |
Asymmetrical High Efficiency Two Channel Boost LED Driver
|
CALMIRCO[California Micro Devices Corp]
|
| CM9321-01DE CM9321 |
Asymmetrical High Efficiency Three Channel Boost LED/OLED Driver
|
CALMIRCO[California Micro Devices Corp]
|
| APTM50DHM75TG |
Asymmetrical - Bridge MOSFET Power Module 46 A, 500 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| APTM20DHM08G |
Asymmetrical Bridge
|
Microsemi
|
| APTGT100DH60T3G |
Asymmetrical Bridge
|
Microsemi
|
| APTGT150DH170G |
Asymmetrical Bridge
|
Microsemi
|
| APTGT75DH60T1G |
Asymmetrical Bridge
|
Microsemi
|
