| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| FRD12000 |
screened 8kV, 6A
|
Cynergy3 Co
|
| SAR405SD SAR412SD |
miniature screened, open frame
|
Cynergy3 Co
|
| 66229 |
CONSTANT CURRENT TRANSFER RATIO/ SINGLE CHANNEL OPTOCOUPLERS/ SCREENED TO JAN/ JANTX/ JANTXV
CONSTANT CURRENT TRANSFER RATIO, SINGLE CHANNEL OPTOCOUPLERS, SCREENED TO JAN, JANTX, JANTXV
|
光电耦合
Micropac Industries, Inc.
MICROPAC[Micropac Industries]
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| 6P3S-E |
Tetrode
|
ETC
|
| 556-7105 556-7105-22-00-00 556-7105-08-00-00 556-7 |
Variable Coil, Unshielded, Vertical, .090μH thru 1.05mΗ
UNSHIELDED, 5.02 uH - 6.2 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.352 uH - 0.431 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.09 uH - 0.11 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 35L6GT 35A5 |
OUTPUT BEAM TETRODE
|
ETC
List of Unclassifed Manufacturers
|
| BG3430R |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF1005S07 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
|
