PART |
Description |
Maker |
DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation Intel Corp. PROM Intel, Corp.
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
SST39VF6402-90-4I-EKE SST39VF1601 SST39VF1601_05 S |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
SST[Silicon Storage Technology, Inc]
|
PM39F010 PM39F010-55JCE PM39F010-55PCE PM39F010-70 |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra, Inc]
|
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
LH28F016SANS-70 LH28F016SANS |
Flash Memory 16 Mbit(1 Mbit x 16, 2 Mbit x 8)
|
SHARP[Sharp Electrionic Components]
|
M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns 1-Mbit (64Kb x16) UV EPROM, 120ns 1-Mbit (64Kb x16) UV EPROM, 150ns 1-Mbit (64Kb x16) UV EPROM, 200ns 1-Mbit (64Kb x16) UV EPROM, 35ns 1-Mbit (64Kb x16) UV EPROM, 45ns 1-Mbit (64Kb x16) UV EPROM, 55ns 1-Mbit (64Kb x16) UV EPROM, 70ns 1-Mbit (64Kb x16) UV EPROM, 80ns 1-Mbit (64Kb x16) UV EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 120ns 1-Mbit (64Kb x16) OTP EPROM, 70ns 1-Mbit (64Kb x16) OTP EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 55ns 1-Mbit (64Kb x16) OTP EPROM, 45ns 1-Mbit (64Kb x16) OTP EPROM, 35ns 1-Mbit (64Kb x16) OTP EPROM, 150ns 1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|